Raytheon Celebrates 15 Years of Innovation with Gallium Nitride

RAYTHEON CELEBRATES 15 YEARS OF INNOVATION WITH GALLIUM NITRIDE RESEARCH 2000 1999 RAYTHEON COMMENCES RESEARCH IN GaN RAYTHEON FABRICATES ITS FIRST GaN TRANSISTOR Andover, Mass. In 2000, Raytheon fabricated its first GaN transistor, the building block for monolithic microwave integrated circuits (MMICS). GaN is a wide bandgap semiconductor (WBGS) material with special properties that a re ideal for applications in optoelectronics a nd high-power, high-frequency amplifiers. DEVELOPMENT From 2004-2008 Raytheon made pioneering advances in GaN transistors, meeting all the DARPA 2004-2008 2002-2004 WBGS program transistor metrics. The high power density, high efficiency process thatemerged during this time formed the underpinning for Raytheon's microwave GaN production process today. GaN TRANSISTOR IMPROVEMENT PHASE GaN MATERIALS IMPROVEMENT PHASE PRODUCTION 2008 June 2013 GaN TRANSITION TO PRODUCTION UNDERWAY In 2009, Raytheon released GaN for production in its 4" trusted compound semiconductor foundry. U.S. GOVERNMENT HONORS RAYTHEON FOR GaN INNOVATIONS INNOVATION CONTINUES INTEGRATION INTO STRATEGIC MILITARY APPLICATIONS As research, development and production continues, GaN is integrated into military applications for Air and Missile Defense Radar, Next Generation Jammer and 3DELRR. Achieved Manufacturing Readiness Level 8 - the highest level obtained by any defense industry organization. Office of the Secretary MRL OSD of Defense award for successful completion of Defense Production 8. 75% chip cost reduction Act Title II. GBS AM 02/14 4342651 Raytheon Customer Success Is Our Mission